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| NTE99 Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line-operated switchmode applications. Applications: D Switching Regulators D Motor Controls D Inverters D Solenoid and Relay Drivers Features: D Fast Turn-Off Times: 1.0s (max) Inductive Crossover Time - 20 Amps 2.5s (max) Inductive Storage Time - 20 Amps D Operating Temperature Range: -65 to +200C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W Maximum Lead Temperature (During Soldering, 1/8" from case for 5sec), TL . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain hFE VCE(sat) VBE(sat) Vf Cob IC = 20A, VCE = 5V IC = 40A, VCE = 5V Collector-Emitter Saturation Voltage IC = 20A, IB = 1A IC = 50A, IB = 10A Base-Emitter Saturation Voltage Diode Forward Voltage Dynamic Characteristic Output Capacitance Switching Characteristics Resistive Load Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped Storage Time Crossover Time tsv tc IC = 20A(pk), Vclamp = 250V, IB1 = 1A, VBE(off) = 5V - - 1.0 0.36 2.5 1.0 s s td tr ts tf VCC = 250V, IC = 20A, IB1 = 1A, VBE(off) = 5V, tp = 25s, Duty Cycle 2% - - - - 0.14 0.3 0.8 0.3 0.3 1.0 2.5 1.0 s s s s VCB = 10V, IE = 0, ftest = 100kHz - - 750 pF IC = 20A, IB = 1A IF = 20A, Note 3 25 10 - - - - - - - - - 2.5 - - 2.2 5.0 2.75 5.0 V V V V VCEO(sus) IC = 100mA, IB = 0, Vclamp = 400V ICEV IEBO VCEV = 600V, VBE(off) = 1.5V VBE = 2V, IC = 0 400 - - - - - - 0.25 350 V mA mA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Widtg = 300s, Duty Cycle 2%. Note 3. The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. Circuit Outline C B [ 50 [8 E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
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